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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD = 15 V, I D = 17 A
240
17
mJ
A
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
20
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
1
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
1
1.9
3
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A, Referenced to 25 ° C
–7
mV/ ° C
R DS(on)
Static Drain–Source
V GS = 10 V,
I D = 17 A
5.2
6.2
m ?
On–Resistance
V GS = 4.5 V, I D = 15 A
V GS = 10 V, I D = 17 A, T J =125 ° C
6.4
8.0
8
11.9
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 5 V,
V DS = 5 V
I D = 17 A
50
65
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
2400
577
258
1.4
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
14
20
ns
t r
t d(off)
t f
Q g
Q gs
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 17 A,
12
38
18
24
6.5
37
64
32
31
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
8.1
nC
FDD6682/FDU6682 Rev H(W)
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